PART |
Description |
Maker |
PRHMB200A6 |
IGBT MODULE Chopper 200A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
PCHMB200A6 |
IGBT MODULE Chopper 200A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
PBMB200E6 |
Full Bridge IGBT Module 200A/600V
|
Nihon Inter Electronics Corporation
|
6MBP200RA060 |
IGBT-IPM(600V/200A) AC MOTOR CONTROLLER, 400 A, XMA24
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
QIC0620001 |
Dual Common Emitter IGBT Module 200A 600V Per Switch
|
POWEREX INC POWEREX[Powerex Power Semiconductors]
|
IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块00安培V的,快速可控硅/二极结构磁共甲柏功率模块 200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块00安培2V的,快速可控硅/二极结构磁共甲柏功率模块 200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块200安培4V电压,快速可控硅/可控结构磁共甲柏功率模块 200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块200安培2V的,快速可控硅/可控结构磁共甲柏功率模块 200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
SD200N04PV SD200N08PV SD200N16PV SD200N20PC SD200N |
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package 1600V 200A Std. Recovery Diode in a DO-205AC (DO-30)package 2000V 200A Std. Recovery Diode in a DO-205AC (DO-30)package 2400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
|
International Rectifier
|
FMG2G200US60 |
600V, 200A IGBT Module (Molding Type) Molding Type Module
|
Fairchild Semiconductor
|
CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262 15A, 600V Stealth Diode 15A/ 600V Stealth Diode 15A, 600V Stealth⑩ Diode 15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
201CNQ045 201CNQ 201CNQ035 201CNQ040 |
SCHOTTKY RECTIFIER 35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package 40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package 45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
IRF[International Rectifier]
|
ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode 8A, 600V Stealth Diode 8A, 600V Stealth⑩ Diode 8A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|